Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
21 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS CP
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
160 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
192 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Length
16.13mm
Typical Gate Charge @ Vgs
39 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5.21mm
Transistor Material
Si
Number of Elements per Chip
1
Height
21.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Product details
Infineon CoolMOS™CP Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
₪ 167.34
₪ 41.835 Each (In a Pack of 4) (ex VAT)
₪ 195.79
₪ 48.947 Each (In a Pack of 4) (inc. VAT)
Standard
4
₪ 167.34
₪ 41.835 Each (In a Pack of 4) (ex VAT)
₪ 195.79
₪ 48.947 Each (In a Pack of 4) (inc. VAT)
Stock information temporarily unavailable.
Standard
4
Stock information temporarily unavailable.
| quantity | Unit price | Per Pack |
|---|---|---|
| 4 - 16 | ₪ 41.835 | ₪ 167.34 |
| 20 - 76 | ₪ 36.03 | ₪ 144.12 |
| 80 - 196 | ₪ 34.725 | ₪ 138.90 |
| 200 - 396 | ₪ 32.235 | ₪ 128.94 |
| 400+ | ₪ 30.915 | ₪ 123.66 |
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
21 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS CP
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
160 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
192 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Length
16.13mm
Typical Gate Charge @ Vgs
39 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5.21mm
Transistor Material
Si
Number of Elements per Chip
1
Height
21.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Product details
Infineon CoolMOS™CP Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.


