Infineon Dual N-Channel MOSFET Transistor & Diode, 109 A, 650 V, 3-Pin TO-247 IPW60R099P6XKSA1

RS Stock No.: 220-7457PBrand: InfineonManufacturers Part No.: IPW60R099P6XKSA1
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

109 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS™ P6

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.099 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4..5V

Number of Elements per Chip

2

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P.O.A.

Each (Supplied in a Tube) (ex VAT)

Infineon Dual N-Channel MOSFET Transistor & Diode, 109 A, 650 V, 3-Pin TO-247 IPW60R099P6XKSA1
Select packaging type

P.O.A.

Each (Supplied in a Tube) (ex VAT)

Infineon Dual N-Channel MOSFET Transistor & Diode, 109 A, 650 V, 3-Pin TO-247 IPW60R099P6XKSA1
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

109 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS™ P6

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.099 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4..5V

Number of Elements per Chip

2

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more