N-Channel MOSFET, 13 A, 550 V, 3-Pin TO-247 Infineon IPW50R250CPFKSA1
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
550 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
114 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Length
16.03mm
Typical Gate Charge @ Vgs
27 nC @ 10 V
Number of Elements per Chip
1
Width
5.16mm
Transistor Material
Si
Forward Diode Voltage
1.2V
Series
CoolMOS CP
Minimum Operating Temperature
-55 °C
Height
21.1mm
Product details
Infineon CoolMOS™CP Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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₪ 670.50
₪ 22.35 Each (Supplied in a Tube) (ex VAT)
₪ 784.48
₪ 26.15 Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
30
₪ 670.50
₪ 22.35 Each (Supplied in a Tube) (ex VAT)
₪ 784.48
₪ 26.15 Each (Supplied in a Tube) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Tube)
30
Stock information temporarily unavailable.
| quantity | Unit price | Per Tube |
|---|---|---|
| 30 - 57 | ₪ 22.35 | ₪ 67.05 |
| 60 - 147 | ₪ 20.85 | ₪ 62.55 |
| 150 - 447 | ₪ 19.275 | ₪ 57.82 |
| 450+ | ₪ 17.535 | ₪ 52.60 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
550 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
114 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Length
16.03mm
Typical Gate Charge @ Vgs
27 nC @ 10 V
Number of Elements per Chip
1
Width
5.16mm
Transistor Material
Si
Forward Diode Voltage
1.2V
Series
CoolMOS CP
Minimum Operating Temperature
-55 °C
Height
21.1mm
Product details
Infineon CoolMOS™CP Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products