Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
300 A
Maximum Drain Source Voltage
100 V
Series
IPT015N10N5
Package Type
HSOF-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.1mm
Typical Gate Charge @ Vgs
169 nC @ 10 V
Width
10.58mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
2.4mm
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₪ 57.292
Each (In a Pack of 5) (ex VAT)
₪ 67.032
Each (In a Pack of 5) (inc VAT)
5
₪ 57.292
Each (In a Pack of 5) (ex VAT)
₪ 67.032
Each (In a Pack of 5) (inc VAT)
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 20 | ₪ 57.292 | ₪ 286.46 |
25 - 95 | ₪ 52.426 | ₪ 262.13 |
100 - 495 | ₪ 43.77 | ₪ 218.85 |
500 - 995 | ₪ 37.183 | ₪ 185.92 |
1000+ | ₪ 34.289 | ₪ 171.44 |
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
300 A
Maximum Drain Source Voltage
100 V
Series
IPT015N10N5
Package Type
HSOF-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.1mm
Typical Gate Charge @ Vgs
169 nC @ 10 V
Width
10.58mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
2.4mm