Infineon OptiMOS™ 2 N-Channel MOSFET, 69 A, 100 V, 3-Pin TO-220 IPP12CN10LGXKSA1

RS Stock No.: 892-2135Brand: InfineonManufacturers Part No.: IPP12CN10L GDistrelec Article No.: 30341234
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Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

69 A

Maximum Drain Source Voltage

100 V

Series

OptiMOS™ 2

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

15.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.57mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.36mm

Typical Gate Charge @ Vgs

58 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

15.95mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Product details

Infineon OptiMOS™2 Power MOSFET Family

Infineon’s OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Stock information temporarily unavailable.

₪ 75.15

₪ 15.03 Each (In a Pack of 5) (ex VAT)

₪ 87.93

₪ 17.585 Each (In a Pack of 5) (inc. VAT)

Infineon OptiMOS™ 2 N-Channel MOSFET, 69 A, 100 V, 3-Pin TO-220 IPP12CN10LGXKSA1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5₪ 75.15
10₪ 150.30
15₪ 225.45
20₪ 300.60
25₪ 301.50
30₪ 361.80
35₪ 422.10
40₪ 482.40
45₪ 542.70
50₪ 603.00
55₪ 663.30
60₪ 723.60
65₪ 783.90
70₪ 844.20
75₪ 904.50

₪ 75.15

₪ 15.03 Each (In a Pack of 5) (ex VAT)

₪ 87.93

₪ 17.585 Each (In a Pack of 5) (inc. VAT)

Infineon OptiMOS™ 2 N-Channel MOSFET, 69 A, 100 V, 3-Pin TO-220 IPP12CN10LGXKSA1
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5₪ 75.15
10₪ 150.30
15₪ 225.45
20₪ 300.60
25₪ 301.50
30₪ 361.80
35₪ 422.10
40₪ 482.40
45₪ 542.70
50₪ 603.00
55₪ 663.30
60₪ 723.60
65₪ 783.90
70₪ 844.20
75₪ 904.50

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Pack
5 - 20₪ 15.03₪ 75.15
25 - 120₪ 12.06₪ 60.30
125+₪ 9.84₪ 49.20

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

69 A

Maximum Drain Source Voltage

100 V

Series

OptiMOS™ 2

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

15.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.57mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.36mm

Typical Gate Charge @ Vgs

58 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

15.95mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Product details

Infineon OptiMOS™2 Power MOSFET Family

Infineon’s OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more