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Infineon CoolMOS™ CFD7 N-Channel MOSFET, 13 A, 600 V, 5-Pin ThinPAK 8 x 8 IPL60R285P7AUMA1

RS Stock No.: 215-2523Brand: InfineonManufacturers Part No.: IPL60R285P7AUMA1
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Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

13 A

Maximum Drain Source Voltage

600 V

Series

CoolMOS™ CFD7

Package Type

ThinPAK 8 x 8

Mounting Type

Surface Mount

Pin Count

5

Maximum Drain Source Resistance

0.285 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Transistor Material

Si

Number of Elements per Chip

1

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Stock information temporarily unavailable.

P.O.A.

Each (On a Reel of 3000) (ex VAT)

Infineon CoolMOS™ CFD7 N-Channel MOSFET, 13 A, 600 V, 5-Pin ThinPAK 8 x 8 IPL60R285P7AUMA1

3000

Available in multiples of 3000
3000P.O.A.
6000P.O.A.
9000P.O.A.
12000P.O.A.
15000P.O.A.
18000P.O.A.
21000P.O.A.
24000P.O.A.
27000P.O.A.
30000P.O.A.
33000P.O.A.
36000P.O.A.
39000P.O.A.
42000P.O.A.
45000P.O.A.

P.O.A.

Each (On a Reel of 3000) (ex VAT)

Infineon CoolMOS™ CFD7 N-Channel MOSFET, 13 A, 600 V, 5-Pin ThinPAK 8 x 8 IPL60R285P7AUMA1
Stock information temporarily unavailable.

3000

Available in multiples of 3000
3000P.O.A.
6000P.O.A.
9000P.O.A.
12000P.O.A.
15000P.O.A.
18000P.O.A.
21000P.O.A.
24000P.O.A.
27000P.O.A.
30000P.O.A.
33000P.O.A.
36000P.O.A.
39000P.O.A.
42000P.O.A.
45000P.O.A.

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

13 A

Maximum Drain Source Voltage

600 V

Series

CoolMOS™ CFD7

Package Type

ThinPAK 8 x 8

Mounting Type

Surface Mount

Pin Count

5

Maximum Drain Source Resistance

0.285 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Transistor Material

Si

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more