Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
40 V
Series
OptiMOS™
Package Type
SuperSO8 5 x 6
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.0072 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
16V
Number of Elements per Chip
2
Stock information temporarily unavailable.
Please check again later.
Stock information temporarily unavailable.
P.O.A.
Dual N-Channel MOSFET Transistor & Diode, 20 A, 40 V, 8-Pin SuperSO8 5 x 6 Infineon IPG20N04S4L07AATMA1
Select packaging type
Standard
10
P.O.A.
Dual N-Channel MOSFET Transistor & Diode, 20 A, 40 V, 8-Pin SuperSO8 5 x 6 Infineon IPG20N04S4L07AATMA1
Stock information temporarily unavailable.
Select packaging type
Standard
10
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
40 V
Series
OptiMOS™
Package Type
SuperSO8 5 x 6
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.0072 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
16V
Number of Elements per Chip
2