Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
86 A
Maximum Drain Source Voltage
40 V
Series
OptiMOS™ -T2
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.0052 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Si
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P.O.A.
2500
P.O.A.
2500
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
86 A
Maximum Drain Source Voltage
40 V
Series
OptiMOS™ -T2
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.0052 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Si