Infineon N-Channel MOSFET, 4 A, 800 V, 3-Pin DPAK IPD80R1K4P7ATMA1

RS Stock No.: 168-5917Brand: InfineonManufacturers Part No.: IPD80R1K4P7ATMA1
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

800 V

Series

CoolMOS™ P7

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.4 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

32 W

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

6.22mm

Length

6.73mm

Typical Gate Charge @ Vgs

10 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.9V

Height

2.41mm

Country of Origin

China

Product details

Infineon CoolMOS™P7 Power MOSFET

The 800V CoolMOS P7 Power MOSFET family establishes even higher efficiency and thermal performance. Suitable applications are power adapters, LED lighting, audio, industrial and auxiliary power.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Stock information temporarily unavailable.

₪ 8,250.00

₪ 3.30 Each (On a Reel of 2500) (ex VAT)

₪ 9,652.50

₪ 3.861 Each (On a Reel of 2500) (inc. VAT)

Infineon N-Channel MOSFET, 4 A, 800 V, 3-Pin DPAK IPD80R1K4P7ATMA1

₪ 8,250.00

₪ 3.30 Each (On a Reel of 2500) (ex VAT)

₪ 9,652.50

₪ 3.861 Each (On a Reel of 2500) (inc. VAT)

Infineon N-Channel MOSFET, 4 A, 800 V, 3-Pin DPAK IPD80R1K4P7ATMA1
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

800 V

Series

CoolMOS™ P7

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.4 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

32 W

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

6.22mm

Length

6.73mm

Typical Gate Charge @ Vgs

10 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.9V

Height

2.41mm

Country of Origin

China

Product details

Infineon CoolMOS™P7 Power MOSFET

The 800V CoolMOS P7 Power MOSFET family establishes even higher efficiency and thermal performance. Suitable applications are power adapters, LED lighting, audio, industrial and auxiliary power.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more