N-Channel MOSFET, 8.4 A, 650 V, 3-Pin DPAK Infineon IPD60R800CEAUMA1
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
8.4 A
Maximum Drain Source Voltage
650 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
800 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
74 W
Maximum Gate Source Voltage
-30 V, +30 V
Width
6.22mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.73mm
Typical Gate Charge @ Vgs
17.2 nC @ 10 V
Height
2.41mm
Series
CoolMOS CE
Minimum Operating Temperature
-40 °C
Forward Diode Voltage
0.9V
Product details
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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₪ 5.09
Each (In a Pack of 25) (ex VAT)
₪ 5.955
Each (In a Pack of 25) (inc VAT)
25
₪ 5.09
Each (In a Pack of 25) (ex VAT)
₪ 5.955
Each (In a Pack of 25) (inc VAT)
25
Buy in bulk
| quantity | Unit price | Per Pack |
|---|---|---|
| 25 - 100 | ₪ 5.09 | ₪ 127.25 |
| 125 - 475 | ₪ 3.342 | ₪ 83.55 |
| 500 - 975 | ₪ 3.216 | ₪ 80.41 |
| 1000 - 2475 | ₪ 2.783 | ₪ 69.57 |
| 2500+ | ₪ 2.685 | ₪ 67.12 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
8.4 A
Maximum Drain Source Voltage
650 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
800 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
74 W
Maximum Gate Source Voltage
-30 V, +30 V
Width
6.22mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.73mm
Typical Gate Charge @ Vgs
17.2 nC @ 10 V
Height
2.41mm
Series
CoolMOS CE
Minimum Operating Temperature
-40 °C
Forward Diode Voltage
0.9V
Product details
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products