Infineon OptiMOS™ N-Channel MOSFET, 30 A, 75 V, 3-Pin DPAK IPD30N08S2L21ATMA1

RS Stock No.: 827-5120PBrand: InfineonManufacturers Part No.: IPD30N08S2L21ATMA1
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Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

75 V

Series

OptiMOS™

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

26 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

136 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.22mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.73mm

Typical Gate Charge @ Vgs

56 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

2.41mm

Minimum Operating Temperature

-55 °C

Product details

Infineon OptiMOS™ Power MOSFET Family

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Stock information temporarily unavailable.

₪ 399.00

₪ 7.98 Each (Supplied on a Reel) (ex VAT)

₪ 466.83

₪ 9.337 Each (Supplied on a Reel) (inc. VAT)

Infineon OptiMOS™ N-Channel MOSFET, 30 A, 75 V, 3-Pin DPAK IPD30N08S2L21ATMA1

50

Available in multiples of 25
50₪ 399.00
75₪ 598.50
100₪ 798.00
125₪ 997.50
150₪ 1,197.00
175₪ 1,396.50
200₪ 1,596.00
225₪ 1,795.50
250₪ 1,773.75
275₪ 1,951.12
300₪ 2,128.50
325₪ 2,305.88
350₪ 2,483.25
375₪ 2,660.62
400₪ 2,838.00

₪ 399.00

₪ 7.98 Each (Supplied on a Reel) (ex VAT)

₪ 466.83

₪ 9.337 Each (Supplied on a Reel) (inc. VAT)

Infineon OptiMOS™ N-Channel MOSFET, 30 A, 75 V, 3-Pin DPAK IPD30N08S2L21ATMA1
Stock information temporarily unavailable.

50

Available in multiples of 25
50₪ 399.00
75₪ 598.50
100₪ 798.00
125₪ 997.50
150₪ 1,197.00
175₪ 1,396.50
200₪ 1,596.00
225₪ 1,795.50
250₪ 1,773.75
275₪ 1,951.12
300₪ 2,128.50
325₪ 2,305.88
350₪ 2,483.25
375₪ 2,660.62
400₪ 2,838.00

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Reel
50 - 225₪ 7.98₪ 199.50
250 - 475₪ 7.095₪ 177.38
500 - 975₪ 5.955₪ 148.88
1000+₪ 5.04₪ 126.00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

75 V

Series

OptiMOS™

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

26 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

136 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.22mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.73mm

Typical Gate Charge @ Vgs

56 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

2.41mm

Minimum Operating Temperature

-55 °C

Product details

Infineon OptiMOS™ Power MOSFET Family

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more