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Infineon OptiMOS™ 3 N-Channel MOSFET, 64 A, 250 V, 3-Pin D2PAK IPB200N25N3GATMA1

RS Stock No.: 898-6870Brand: InfineonManufacturers Part No.: IPB200N25N3GATMA1
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

64 A

Maximum Drain Source Voltage

250 V

Series

OptiMOS™ 3

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

10.31mm

Typical Gate Charge @ Vgs

64 nC @ 10 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Width

9.45mm

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

Height

4.57mm

Product details

Infineon OptiMOS™3 Power MOSFETs, 100V and over

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Stock information temporarily unavailable.

₪ 121.83

₪ 60.915 Each (In a Pack of 2) (ex VAT)

₪ 142.54

₪ 71.271 Each (In a Pack of 2) (inc. VAT)

Infineon OptiMOS™ 3 N-Channel MOSFET, 64 A, 250 V, 3-Pin D2PAK IPB200N25N3GATMA1
Select packaging type

₪ 121.83

₪ 60.915 Each (In a Pack of 2) (ex VAT)

₪ 142.54

₪ 71.271 Each (In a Pack of 2) (inc. VAT)

Infineon OptiMOS™ 3 N-Channel MOSFET, 64 A, 250 V, 3-Pin D2PAK IPB200N25N3GATMA1
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Pack
2 - 8₪ 60.915₪ 121.83
10 - 48₪ 49.08₪ 98.16
50 - 98₪ 46.47₪ 92.94
100 - 248₪ 43.83₪ 87.66
250+₪ 42.21₪ 84.42

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

64 A

Maximum Drain Source Voltage

250 V

Series

OptiMOS™ 3

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

10.31mm

Typical Gate Charge @ Vgs

64 nC @ 10 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Width

9.45mm

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

Height

4.57mm

Product details

Infineon OptiMOS™3 Power MOSFETs, 100V and over

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more