Infineon OptiMOS™ 3 N-Channel MOSFET, 50 A, 150 V, 3-Pin D2PAK IPB200N15N3GATMA1
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
150 V
Package Type
D2PAK (TO-263)
Series
OptiMOS™ 3
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
10.31mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
23 nC @ 10 V
Width
9.45mm
Transistor Material
Si
Height
4.57mm
Minimum Operating Temperature
-55 °C
Product details
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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₪ 47.67
₪ 23.835 Each (In a Pack of 2) (ex VAT)
₪ 55.77
₪ 27.887 Each (In a Pack of 2) (inc. VAT)
Standard
2
₪ 47.67
₪ 23.835 Each (In a Pack of 2) (ex VAT)
₪ 55.77
₪ 27.887 Each (In a Pack of 2) (inc. VAT)
Stock information temporarily unavailable.
Standard
2
Stock information temporarily unavailable.
| quantity | Unit price | Per Pack |
|---|---|---|
| 2 - 8 | ₪ 23.835 | ₪ 47.67 |
| 10 - 48 | ₪ 20.49 | ₪ 40.98 |
| 50 - 248 | ₪ 19.785 | ₪ 39.57 |
| 250 - 498 | ₪ 16.92 | ₪ 33.84 |
| 500+ | ₪ 15.03 | ₪ 30.06 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
150 V
Package Type
D2PAK (TO-263)
Series
OptiMOS™ 3
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
10.31mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
23 nC @ 10 V
Width
9.45mm
Transistor Material
Si
Height
4.57mm
Minimum Operating Temperature
-55 °C
Product details
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products