Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
180 A
Maximum Drain Source Voltage
100 V
Series
IPB180N10S4-02
Package Type
TO-263
Mounting Type
Surface Mount
Pin Count
7 + Tab
Maximum Drain Source Resistance
2.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
10.25mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10mm
Typical Gate Charge @ Vgs
156 nC @ 10 V
Height
4.4mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
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₪ 46.189
Each (In a Pack of 5) (ex VAT)
₪ 54.041
Each (In a Pack of 5) (inc VAT)
5
₪ 46.189
Each (In a Pack of 5) (ex VAT)
₪ 54.041
Each (In a Pack of 5) (inc VAT)
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 20 | ₪ 46.189 | ₪ 230.95 |
25 - 95 | ₪ 39.896 | ₪ 199.48 |
100 - 245 | ₪ 35.128 | ₪ 175.64 |
250 - 495 | ₪ 33.869 | ₪ 169.35 |
500+ | ₪ 30.863 | ₪ 154.31 |
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
180 A
Maximum Drain Source Voltage
100 V
Series
IPB180N10S4-02
Package Type
TO-263
Mounting Type
Surface Mount
Pin Count
7 + Tab
Maximum Drain Source Resistance
2.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
10.25mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10mm
Typical Gate Charge @ Vgs
156 nC @ 10 V
Height
4.4mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V