Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Series
OptiMOS™ -T2
Package Type
D2PAK (TO-263)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.002 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Si
Stock information temporarily unavailable.
Please check again later.
P.O.A.
Standard
5
P.O.A.
Standard
5
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Series
OptiMOS™ -T2
Package Type
D2PAK (TO-263)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.002 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Si