Infineon OptiMOS™ 3 N-Channel MOSFET, 180 A, 120 V, 7-Pin D2PAK-7 IPB036N12N3GATMA1
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
180 A
Maximum Drain Source Voltage
120 V
Package Type
D2PAK-7
Series
OptiMOS™ 3
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
3.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Number of Elements per Chip
1
Length
10.31mm
Typical Gate Charge @ Vgs
158 nC @ 10 V
Width
9.45mm
Height
4.57mm
Minimum Operating Temperature
-55 °C
Product details
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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₪ 57.04
₪ 57.04 Each (ex VAT)
₪ 66.74
₪ 66.74 Each (inc. VAT)
Standard
1
₪ 57.04
₪ 57.04 Each (ex VAT)
₪ 66.74
₪ 66.74 Each (inc. VAT)
Stock information temporarily unavailable.
Standard
1
Stock information temporarily unavailable.
| quantity | Unit price |
|---|---|
| 1 - 9 | ₪ 57.04 |
| 10 - 49 | ₪ 49.20 |
| 50 - 249 | ₪ 47.43 |
| 250 - 499 | ₪ 41.72 |
| 500+ | ₪ 38.02 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
180 A
Maximum Drain Source Voltage
120 V
Package Type
D2PAK-7
Series
OptiMOS™ 3
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
3.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Number of Elements per Chip
1
Length
10.31mm
Typical Gate Charge @ Vgs
158 nC @ 10 V
Width
9.45mm
Height
4.57mm
Minimum Operating Temperature
-55 °C
Product details
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products