Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
180 A
Maximum Drain Source Voltage
100 V
Series
IPB017N10N5
Package Type
TO-263
Mounting Type
Surface Mount
Pin Count
7 + Tab
Maximum Drain Source Resistance
2.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
11.05mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.31mm
Typical Gate Charge @ Vgs
168 nC @ 10 V
Height
4.57mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
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₪ 51.153
Each (In a Pack of 5) (ex VAT)
₪ 59.849
Each (In a Pack of 5) (inc VAT)
5
₪ 51.153
Each (In a Pack of 5) (ex VAT)
₪ 59.849
Each (In a Pack of 5) (inc VAT)
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 20 | ₪ 51.153 | ₪ 255.77 |
25 - 95 | ₪ 44.189 | ₪ 220.95 |
100 - 245 | ₪ 38.862 | ₪ 194.31 |
250 - 495 | ₪ 37.365 | ₪ 186.83 |
500+ | ₪ 34.065 | ₪ 170.33 |
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
180 A
Maximum Drain Source Voltage
100 V
Series
IPB017N10N5
Package Type
TO-263
Mounting Type
Surface Mount
Pin Count
7 + Tab
Maximum Drain Source Resistance
2.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
11.05mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.31mm
Typical Gate Charge @ Vgs
168 nC @ 10 V
Height
4.57mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V