Infineon OptiMOS™ 3 N-Channel MOSFET, 37 A, 150 V, 3-Pin TO-220 FP IPA105N15N3GXKSA1

Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
37 A
Maximum Drain Source Voltage
150 V
Series
OptiMOS™ 3
Package Type
TO-220 FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
11.1 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
40.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.85mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.65mm
Typical Gate Charge @ Vgs
41 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
16.15mm
Forward Diode Voltage
1.2V
Minimum Operating Temperature
-55 °C
Product details
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
₪ 154.56
₪ 38.64 Each (In a Pack of 4) (ex VAT)
₪ 180.84
₪ 45.209 Each (In a Pack of 4) (inc. VAT)
Standard
4
₪ 154.56
₪ 38.64 Each (In a Pack of 4) (ex VAT)
₪ 180.84
₪ 45.209 Each (In a Pack of 4) (inc. VAT)
Stock information temporarily unavailable.
Standard
4
Stock information temporarily unavailable.
| quantity | Unit price | Per Pack |
|---|---|---|
| 4 - 4 | ₪ 38.64 | ₪ 154.56 |
| 8 - 36 | ₪ 37.275 | ₪ 149.10 |
| 40 - 76 | ₪ 33.87 | ₪ 135.48 |
| 80 - 196 | ₪ 32.64 | ₪ 130.56 |
| 200+ | ₪ 30.30 | ₪ 121.20 |
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
37 A
Maximum Drain Source Voltage
150 V
Series
OptiMOS™ 3
Package Type
TO-220 FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
11.1 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
40.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.85mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.65mm
Typical Gate Charge @ Vgs
41 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
16.15mm
Forward Diode Voltage
1.2V
Minimum Operating Temperature
-55 °C
Product details
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

