Technical documents
Specifications
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
260 mA
Maximum Drain Source Voltage
250 V
Series
SIPMOS®
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
20 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
4.3 nC @ 10 V
Number of Elements per Chip
1
Length
6.5mm
Maximum Operating Temperature
+150 °C
Width
3.5mm
Transistor Material
Si
Height
1.6mm
Minimum Operating Temperature
-55 °C
Product details
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
₪ 217.50
₪ 2.175 Each (Supplied on a Reel) (ex VAT)
₪ 254.48
₪ 2.545 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
100
₪ 217.50
₪ 2.175 Each (Supplied on a Reel) (ex VAT)
₪ 254.48
₪ 2.545 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
100
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Reel |
---|---|---|
100 - 190 | ₪ 2.175 | ₪ 21.75 |
200 - 390 | ₪ 1.95 | ₪ 19.50 |
400 - 790 | ₪ 1.77 | ₪ 17.70 |
800+ | ₪ 1.665 | ₪ 16.65 |
Technical documents
Specifications
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
260 mA
Maximum Drain Source Voltage
250 V
Series
SIPMOS®
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
20 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
4.3 nC @ 10 V
Number of Elements per Chip
1
Length
6.5mm
Maximum Operating Temperature
+150 °C
Width
3.5mm
Transistor Material
Si
Height
1.6mm
Minimum Operating Temperature
-55 °C
Product details
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.