Infineon SIPMOS® P-Channel MOSFET, 430 mA, 250 V, 3-Pin SOT-223 BSP317PH6327XTSA1

RS Stock No.: 753-2813Brand: InfineonManufacturers Part No.: BSP317P
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Technical documents

Specifications

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

430 mA

Maximum Drain Source Voltage

250 V

Series

SIPMOS®

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

11.6 nC @ 10 V

Width

3.5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.5mm

Maximum Operating Temperature

+150 °C

Height

1.6mm

Minimum Operating Temperature

-55 °C

Product details

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Stock information temporarily unavailable.

₪ 68.25

₪ 6.825 Each (In a Pack of 10) (ex VAT)

₪ 79.85

₪ 7.985 Each (In a Pack of 10) (inc. VAT)

Infineon SIPMOS® P-Channel MOSFET, 430 mA, 250 V, 3-Pin SOT-223 BSP317PH6327XTSA1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10₪ 68.25
20₪ 136.50
30₪ 204.75
40₪ 273.00
50₪ 318.00
60₪ 381.60
70₪ 445.20
80₪ 508.80
90₪ 572.40
100₪ 636.00
110₪ 699.60
120₪ 763.20
130₪ 826.80
140₪ 890.40
150₪ 954.00

₪ 68.25

₪ 6.825 Each (In a Pack of 10) (ex VAT)

₪ 79.85

₪ 7.985 Each (In a Pack of 10) (inc. VAT)

Infineon SIPMOS® P-Channel MOSFET, 430 mA, 250 V, 3-Pin SOT-223 BSP317PH6327XTSA1
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10₪ 68.25
20₪ 136.50
30₪ 204.75
40₪ 273.00
50₪ 318.00
60₪ 381.60
70₪ 445.20
80₪ 508.80
90₪ 572.40
100₪ 636.00
110₪ 699.60
120₪ 763.20
130₪ 826.80
140₪ 890.40
150₪ 954.00

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Pack
10 - 40₪ 6.825₪ 68.25
50 - 240₪ 6.36₪ 63.60
250 - 490₪ 3.765₪ 37.65
500+₪ 3.585₪ 35.85

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

430 mA

Maximum Drain Source Voltage

250 V

Series

SIPMOS®

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

11.6 nC @ 10 V

Width

3.5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.5mm

Maximum Operating Temperature

+150 °C

Height

1.6mm

Minimum Operating Temperature

-55 °C

Product details

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more