Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
11.3 A
Maximum Drain Source Voltage
200 V
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
125 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
6.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.35mm
Typical Gate Charge @ Vgs
6.5 nC @ 10 V
Height
1.1mm
Series
BSC12DN20NS3 G
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
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₪ 10.544
Each (In a Pack of 10) (ex VAT)
₪ 12.336
Each (In a Pack of 10) (inc VAT)
10
₪ 10.544
Each (In a Pack of 10) (ex VAT)
₪ 12.336
Each (In a Pack of 10) (inc VAT)
10
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
10 - 90 | ₪ 10.544 | ₪ 105.44 |
100 - 490 | ₪ 8.46 | ₪ 84.60 |
500 - 990 | ₪ 6.712 | ₪ 67.12 |
1000 - 2490 | ₪ 5.496 | ₪ 54.96 |
2500+ | ₪ 5.30 | ₪ 53.00 |
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
11.3 A
Maximum Drain Source Voltage
200 V
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
125 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
6.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.35mm
Typical Gate Charge @ Vgs
6.5 nC @ 10 V
Height
1.1mm
Series
BSC12DN20NS3 G
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V