Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
84 A
Maximum Drain Source Voltage
25 V
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
4.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
37 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+20 V
Width
6.35mm
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Length
5.35mm
Typical Gate Charge @ Vgs
7.7 nC @ 4.5 V
Height
1.1mm
Series
OptiMOS
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Country of Origin
Malaysia
Product details
Infineon OptiMOS™ Power MOSFET Family
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Stock information temporarily unavailable.
Please check again later.
₪ 7.761
Each (In a Pack of 5) (ex VAT)
₪ 9.08
Each (In a Pack of 5) (inc VAT)
5
₪ 7.761
Each (In a Pack of 5) (ex VAT)
₪ 9.08
Each (In a Pack of 5) (inc VAT)
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 45 | ₪ 7.761 | ₪ 38.81 |
50 - 245 | ₪ 6.74 | ₪ 33.70 |
250 - 1245 | ₪ 5.971 | ₪ 29.86 |
1250 - 2495 | ₪ 5.09 | ₪ 25.45 |
2500+ | ₪ 4.908 | ₪ 24.54 |
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
84 A
Maximum Drain Source Voltage
25 V
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
4.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
37 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+20 V
Width
6.35mm
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Length
5.35mm
Typical Gate Charge @ Vgs
7.7 nC @ 4.5 V
Height
1.1mm
Series
OptiMOS
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Country of Origin
Malaysia
Product details
Infineon OptiMOS™ Power MOSFET Family
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.