Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
40 V
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
1.9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
96 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
6.15mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.15mm
Typical Gate Charge @ Vgs
61 nC @ 10 V
Series
BSC014N04LS
Minimum Operating Temperature
-55 °C
Height
1.1mm
Forward Diode Voltage
1V
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₪ 12.138
Each (In a Pack of 10) (ex VAT)
₪ 14.201
Each (In a Pack of 10) (inc VAT)
10
₪ 12.138
Each (In a Pack of 10) (ex VAT)
₪ 14.201
Each (In a Pack of 10) (inc VAT)
10
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
10 - 90 | ₪ 12.138 | ₪ 121.38 |
100 - 490 | ₪ 9.845 | ₪ 98.45 |
500 - 990 | ₪ 8.782 | ₪ 87.82 |
1000 - 2490 | ₪ 7.481 | ₪ 74.81 |
2500+ | ₪ 7.216 | ₪ 72.16 |
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
40 V
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
1.9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
96 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
6.15mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.15mm
Typical Gate Charge @ Vgs
61 nC @ 10 V
Series
BSC014N04LS
Minimum Operating Temperature
-55 °C
Height
1.1mm
Forward Diode Voltage
1V