Technical documents
Specifications
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
1.6 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
210 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
806 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.4mm
Typical Gate Charge @ Vgs
3.8 nC @ 5 V, 6.4 nC @ 10 V
Transistor Material
Si
Number of Elements per Chip
1
Length
3.05mm
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Product details
P-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
₪ 41.55
₪ 4.155 Each (In a Pack of 10) (ex VAT)
₪ 48.61
₪ 4.861 Each (In a Pack of 10) (inc. VAT)
Standard
10
₪ 41.55
₪ 4.155 Each (In a Pack of 10) (ex VAT)
₪ 48.61
₪ 4.861 Each (In a Pack of 10) (inc. VAT)
Standard
10
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
10 - 20 | ₪ 4.155 | ₪ 41.55 |
30 - 140 | ₪ 2.49 | ₪ 24.90 |
150 - 740 | ₪ 2.205 | ₪ 22.05 |
750 - 1490 | ₪ 1.905 | ₪ 19.05 |
1500+ | ₪ 1.605 | ₪ 16.05 |
Technical documents
Specifications
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
1.6 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
210 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
806 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.4mm
Typical Gate Charge @ Vgs
3.8 nC @ 5 V, 6.4 nC @ 10 V
Transistor Material
Si
Number of Elements per Chip
1
Length
3.05mm
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Product details