Diodes Inc Quad N/P-Channel-Channel MOSFET, 1.8 A, 3.1 A, 30 V, 8-Pin SM ZXMHC3A01T8TA
Technical documents
Specifications
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
1.8 A, 3.1 A
Maximum Drain Source Voltage
30 V
Package Type
SM
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
180 mΩ, 330 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Full Bridge
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.7mm
Transistor Material
Si
Number of Elements per Chip
4
Length
6.7mm
Typical Gate Charge @ Vgs
3.9 nC @ 10 V, 5.2 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.6mm
Minimum Operating Temperature
-55 °C
Product details
Complementary Enhancement Mode MOSFET H-Bridge, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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₪ 208.58
₪ 13.905 Each (Supplied on a Reel) (ex VAT)
₪ 244.04
₪ 16.269 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
15
₪ 208.58
₪ 13.905 Each (Supplied on a Reel) (ex VAT)
₪ 244.04
₪ 16.269 Each (Supplied on a Reel) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
15
Stock information temporarily unavailable.
| quantity | Unit price | Per Reel |
|---|---|---|
| 15 - 45 | ₪ 13.905 | ₪ 69.52 |
| 50 - 245 | ₪ 12.495 | ₪ 62.48 |
| 250 - 495 | ₪ 10.98 | ₪ 54.90 |
| 500+ | ₪ 9.465 | ₪ 47.32 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
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- Download 3D Models, Schematics and Footprints from more than a million products
Technical documents
Specifications
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
1.8 A, 3.1 A
Maximum Drain Source Voltage
30 V
Package Type
SM
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
180 mΩ, 330 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Full Bridge
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.7mm
Transistor Material
Si
Number of Elements per Chip
4
Length
6.7mm
Typical Gate Charge @ Vgs
3.9 nC @ 10 V, 5.2 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.6mm
Minimum Operating Temperature
-55 °C
Product details
Complementary Enhancement Mode MOSFET H-Bridge, Diodes Inc.
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products