Diodes Inc Dual P-Channel MOSFET, 5.8 A, 40 V, 8-Pin SOIC DMP4025LSD-13

RS Stock No.: 823-4030Brand: DiodesZetexManufacturers Part No.: DMP4025LSD-13
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Technical documents

Specifications

Channel Type

P

Maximum Continuous Drain Current

5.8 A

Maximum Drain Source Voltage

40 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

45 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

2.14 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Width

3.95mm

Transistor Material

Si

Number of Elements per Chip

2

Length

4.95mm

Typical Gate Charge @ Vgs

33.7 nC @ 10 V

Height

1.5mm

Minimum Operating Temperature

-55 °C

Product details

Dual P-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

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₪ 66.15

₪ 6.615 Each (In a Pack of 10) (ex VAT)

₪ 77.40

₪ 7.74 Each (In a Pack of 10) (inc. VAT)

Diodes Inc Dual P-Channel MOSFET, 5.8 A, 40 V, 8-Pin SOIC DMP4025LSD-13
Select packaging type

₪ 66.15

₪ 6.615 Each (In a Pack of 10) (ex VAT)

₪ 77.40

₪ 7.74 Each (In a Pack of 10) (inc. VAT)

Diodes Inc Dual P-Channel MOSFET, 5.8 A, 40 V, 8-Pin SOIC DMP4025LSD-13

Stock information temporarily unavailable.

Select packaging type

Stock information temporarily unavailable.

quantityUnit pricePer Pack
10 - 20₪ 6.615₪ 66.15
30 - 120₪ 4.89₪ 48.90
130 - 620₪ 4.125₪ 41.25
630 - 1240₪ 4.02₪ 40.20
1250+₪ 3.96₪ 39.60

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical documents

Specifications

Channel Type

P

Maximum Continuous Drain Current

5.8 A

Maximum Drain Source Voltage

40 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

45 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

2.14 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Width

3.95mm

Transistor Material

Si

Number of Elements per Chip

2

Length

4.95mm

Typical Gate Charge @ Vgs

33.7 nC @ 10 V

Height

1.5mm

Minimum Operating Temperature

-55 °C

Product details

Dual P-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more