Technical documents
Specifications
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
40 V
Package Type
PowerDI5060-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Width
6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5.1mm
Typical Gate Charge @ Vgs
47.5 nC @ 5 V
Maximum Operating Temperature
+150 °C
Height
1.1mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
P-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
₪ 274.50
₪ 5.49 Each (Supplied on a Reel) (ex VAT)
₪ 321.16
₪ 6.423 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
50
₪ 274.50
₪ 5.49 Each (Supplied on a Reel) (ex VAT)
₪ 321.16
₪ 6.423 Each (Supplied on a Reel) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
50
Stock information temporarily unavailable.
| quantity | Unit price | Per Reel |
|---|---|---|
| 50 - 120 | ₪ 5.49 | ₪ 54.90 |
| 130 - 620 | ₪ 3.75 | ₪ 37.50 |
| 630 - 1250 | ₪ 3.615 | ₪ 36.15 |
| 1260+ | ₪ 3.135 | ₪ 31.35 |
Technical documents
Specifications
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
40 V
Package Type
PowerDI5060-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Width
6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5.1mm
Typical Gate Charge @ Vgs
47.5 nC @ 5 V
Maximum Operating Temperature
+150 °C
Height
1.1mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details


