Technical documents
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
20V
Maximum Power Dissipation
400 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
0.87 nC @ 10 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
2
Height
1mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
Stock information temporarily unavailable.
Please check again later.
₪ 0.741
Each (Supplied on a Reel) (ex VAT)
₪ 0.867
Each (Supplied on a Reel) (inc VAT)
100
₪ 0.741
Each (Supplied on a Reel) (ex VAT)
₪ 0.867
Each (Supplied on a Reel) (inc VAT)
100
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
100 - 400 | ₪ 0.741 | ₪ 74.12 |
500 - 900 | ₪ 0.713 | ₪ 71.32 |
1000 - 1400 | ₪ 0.643 | ₪ 64.33 |
1500 - 2900 | ₪ 0.629 | ₪ 62.93 |
3000+ | ₪ 0.447 | ₪ 44.75 |
Technical documents
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
20V
Maximum Power Dissipation
400 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
0.87 nC @ 10 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
2
Height
1mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details