Diodes Inc Dual N-Channel MOSFET, 200 mA, 60 V, 6-Pin SOT-363 DMN65D8LDW-7
Technical documents
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
20V
Maximum Power Dissipation
400 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
2
Length
2.2mm
Typical Gate Charge @ Vgs
0.87 nC @ 10 V
Width
1.35mm
Transistor Material
Si
Height
1mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
₪ 382.50
₪ 0.765 Each (Supplied on a Reel) (ex VAT)
₪ 447.52
₪ 0.895 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
500
₪ 382.50
₪ 0.765 Each (Supplied on a Reel) (ex VAT)
₪ 447.52
₪ 0.895 Each (Supplied on a Reel) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
500
Stock information temporarily unavailable.
| quantity | Unit price | Per Reel |
|---|---|---|
| 500 - 900 | ₪ 0.765 | ₪ 76.50 |
| 1000 - 1400 | ₪ 0.69 | ₪ 69.00 |
| 1500 - 2900 | ₪ 0.675 | ₪ 67.50 |
| 3000+ | ₪ 0.48 | ₪ 48.00 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical documents
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
20V
Maximum Power Dissipation
400 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
2
Length
2.2mm
Typical Gate Charge @ Vgs
0.87 nC @ 10 V
Width
1.35mm
Transistor Material
Si
Height
1mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products