Diodes Inc Dual N-Channel MOSFET, 200 mA, 60 V, 6-Pin SOT-363 DMN65D8LDW-7

RS Stock No.: 822-2602Brand: DiodesZetexManufacturers Part No.: DMN65D8LDW-7
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

200 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

8 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

20V

Maximum Power Dissipation

400 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

2

Length

2.2mm

Typical Gate Charge @ Vgs

0.87 nC @ 10 V

Width

1.35mm

Transistor Material

Si

Height

1mm

Minimum Operating Temperature

-55 °C

Product details

Dual N-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

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₪ 81.00

₪ 0.81 Each (In a Pack of 100) (ex VAT)

₪ 94.77

₪ 0.948 Each (In a Pack of 100) (inc. VAT)

Diodes Inc Dual N-Channel MOSFET, 200 mA, 60 V, 6-Pin SOT-363 DMN65D8LDW-7
Select packaging type

₪ 81.00

₪ 0.81 Each (In a Pack of 100) (ex VAT)

₪ 94.77

₪ 0.948 Each (In a Pack of 100) (inc. VAT)

Diodes Inc Dual N-Channel MOSFET, 200 mA, 60 V, 6-Pin SOT-363 DMN65D8LDW-7

Stock information temporarily unavailable.

Select packaging type

Stock information temporarily unavailable.

quantityUnit pricePer Pack
100 - 400₪ 0.81₪ 81.00
500 - 900₪ 0.78₪ 78.00
1000 - 1400₪ 0.705₪ 70.50
1500 - 2900₪ 0.69₪ 69.00
3000+₪ 0.495₪ 49.50

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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

200 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

8 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

20V

Maximum Power Dissipation

400 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

2

Length

2.2mm

Typical Gate Charge @ Vgs

0.87 nC @ 10 V

Width

1.35mm

Transistor Material

Si

Height

1mm

Minimum Operating Temperature

-55 °C

Product details

Dual N-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more