Technical documents
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
20V
Maximum Power Dissipation
400 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
2
Length
2.2mm
Typical Gate Charge @ Vgs
0.87 nC @ 10 V
Width
1.35mm
Transistor Material
Si
Height
1mm
Minimum Operating Temperature
-55 °C
Product details
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
₪ 81.00
₪ 0.81 Each (In a Pack of 100) (ex VAT)
₪ 94.77
₪ 0.948 Each (In a Pack of 100) (inc. VAT)
Standard
100
₪ 81.00
₪ 0.81 Each (In a Pack of 100) (ex VAT)
₪ 94.77
₪ 0.948 Each (In a Pack of 100) (inc. VAT)
Stock information temporarily unavailable.
Standard
100
Stock information temporarily unavailable.
| quantity | Unit price | Per Pack |
|---|---|---|
| 100 - 400 | ₪ 0.81 | ₪ 81.00 |
| 500 - 900 | ₪ 0.78 | ₪ 78.00 |
| 1000 - 1400 | ₪ 0.705 | ₪ 70.50 |
| 1500 - 2900 | ₪ 0.69 | ₪ 69.00 |
| 3000+ | ₪ 0.495 | ₪ 49.50 |
Technical documents
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
20V
Maximum Power Dissipation
400 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
2
Length
2.2mm
Typical Gate Charge @ Vgs
0.87 nC @ 10 V
Width
1.35mm
Transistor Material
Si
Height
1mm
Minimum Operating Temperature
-55 °C
Product details


