Technical documents
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
407 mA
Maximum Drain Source Voltage
60 V
Package Type
X1-DFN1006
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
0.67mm
Length
1.07mm
Typical Gate Charge @ Vgs
0.45 nC @ 4.5V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Height
0.48mm
Country of Origin
China
₪ 5,400.00
₪ 0.54 Each (On a Reel of 10000) (ex VAT)
₪ 6,318.00
₪ 0.632 Each (On a Reel of 10000) (inc. VAT)
10000
₪ 5,400.00
₪ 0.54 Each (On a Reel of 10000) (ex VAT)
₪ 6,318.00
₪ 0.632 Each (On a Reel of 10000) (inc. VAT)
10000
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Technical documents
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
407 mA
Maximum Drain Source Voltage
60 V
Package Type
X1-DFN1006
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
0.67mm
Length
1.07mm
Typical Gate Charge @ Vgs
0.45 nC @ 4.5V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Height
0.48mm
Country of Origin
China