Technical documents
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
360 mA
Maximum Drain Source Voltage
50 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
4.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
310 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
2.2mm
Typical Gate Charge @ Vgs
0.6 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V
Product details
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
₪ 97.50
₪ 0.975 Each (In a Pack of 100) (ex VAT)
₪ 114.08
₪ 1.141 Each (In a Pack of 100) (inc. VAT)
Standard
100
₪ 97.50
₪ 0.975 Each (In a Pack of 100) (ex VAT)
₪ 114.08
₪ 1.141 Each (In a Pack of 100) (inc. VAT)
Standard
100
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
100 - 400 | ₪ 0.975 | ₪ 97.50 |
500 - 900 | ₪ 0.795 | ₪ 79.50 |
1000 - 1900 | ₪ 0.66 | ₪ 66.00 |
2000 - 2900 | ₪ 0.57 | ₪ 57.00 |
3000+ | ₪ 0.51 | ₪ 51.00 |
Technical documents
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
360 mA
Maximum Drain Source Voltage
50 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
4.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
310 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
2.2mm
Typical Gate Charge @ Vgs
0.6 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V
Product details