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Diodes Inc N-Channel MOSFET, 360 mA, 50 V, 6-Pin SOT-363 DMN53D0LDW-7

RS Stock No.: 921-1105Brand: DiodesZetexManufacturers Part No.: DMN53D0LDW-7
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

360 mA

Maximum Drain Source Voltage

50 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

4.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

310 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.35mm

Transistor Material

Si

Number of Elements per Chip

1

Length

2.2mm

Typical Gate Charge @ Vgs

0.6 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

Product details

N-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Stock information temporarily unavailable.

₪ 97.50

₪ 0.975 Each (In a Pack of 100) (ex VAT)

₪ 114.08

₪ 1.141 Each (In a Pack of 100) (inc. VAT)

Diodes Inc N-Channel MOSFET, 360 mA, 50 V, 6-Pin SOT-363 DMN53D0LDW-7
Select packaging type

₪ 97.50

₪ 0.975 Each (In a Pack of 100) (ex VAT)

₪ 114.08

₪ 1.141 Each (In a Pack of 100) (inc. VAT)

Diodes Inc N-Channel MOSFET, 360 mA, 50 V, 6-Pin SOT-363 DMN53D0LDW-7
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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quantityUnit pricePer Pack
100 - 400₪ 0.975₪ 97.50
500 - 900₪ 0.795₪ 79.50
1000 - 1900₪ 0.66₪ 66.00
2000 - 2900₪ 0.57₪ 57.00
3000+₪ 0.51₪ 51.00

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

360 mA

Maximum Drain Source Voltage

50 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

4.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

310 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.35mm

Transistor Material

Si

Number of Elements per Chip

1

Length

2.2mm

Typical Gate Charge @ Vgs

0.6 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

Product details

N-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more