Technical documents
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
20 V
Package Type
X2-DFN1006
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.95V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
0.65mm
Transistor Material
Si
Number of Elements per Chip
1
Length
1.05mm
Typical Gate Charge @ Vgs
1.6 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
0.35mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
₪ 258.75
₪ 1.035 Each (Supplied on a Reel) (ex VAT)
₪ 302.74
₪ 1.211 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
250
₪ 258.75
₪ 1.035 Each (Supplied on a Reel) (ex VAT)
₪ 302.74
₪ 1.211 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
250
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Reel |
---|---|---|
250 - 450 | ₪ 1.035 | ₪ 51.75 |
500 - 2450 | ₪ 1.005 | ₪ 50.25 |
2500 - 4950 | ₪ 0.585 | ₪ 29.25 |
5000+ | ₪ 0.57 | ₪ 28.50 |
Technical documents
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
20 V
Package Type
X2-DFN1006
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.95V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
0.65mm
Transistor Material
Si
Number of Elements per Chip
1
Length
1.05mm
Typical Gate Charge @ Vgs
1.6 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
0.35mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details