Technical documents
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
4.2 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
45 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
800 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Typical Gate Charge @ Vgs
7 nC @ 4.5 V
Width
1.4mm
Transistor Material
Si
Length
3mm
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Height
1.1mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
₪ 108.00
₪ 2.16 Each (In a Pack of 50) (ex VAT)
₪ 126.36
₪ 2.527 Each (In a Pack of 50) (inc. VAT)
Standard
50
₪ 108.00
₪ 2.16 Each (In a Pack of 50) (ex VAT)
₪ 126.36
₪ 2.527 Each (In a Pack of 50) (inc. VAT)
Stock information temporarily unavailable.
Standard
50
Stock information temporarily unavailable.
| quantity | Unit price | Per Pack |
|---|---|---|
| 50 - 550 | ₪ 2.16 | ₪ 108.00 |
| 600 - 1450 | ₪ 0.93 | ₪ 46.50 |
| 1500+ | ₪ 0.705 | ₪ 35.25 |
Technical documents
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
4.2 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
45 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
800 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Typical Gate Charge @ Vgs
7 nC @ 4.5 V
Width
1.4mm
Transistor Material
Si
Length
3mm
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Height
1.1mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details


