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Diodes Inc N-Channel MOSFET, 6.4 A, 20 V, 3-Pin SOT-23 DMN2041L-7

RS Stock No.: 751-4149Brand: DiodesZetexManufacturers Part No.: DMN2041L-7
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

6.4 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

41 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

780 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Typical Gate Charge @ Vgs

15.6 nC @ 10 V

Width

1.4mm

Transistor Material

Si

Length

3mm

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Height

1.1mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

N-Channel MOSFET, 12V to 28V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Stock information temporarily unavailable.

₪ 113.25

₪ 2.265 Each (In a Pack of 50) (ex VAT)

₪ 132.50

₪ 2.65 Each (In a Pack of 50) (inc. VAT)

Diodes Inc N-Channel MOSFET, 6.4 A, 20 V, 3-Pin SOT-23 DMN2041L-7
Select packaging type

₪ 113.25

₪ 2.265 Each (In a Pack of 50) (ex VAT)

₪ 132.50

₪ 2.65 Each (In a Pack of 50) (inc. VAT)

Diodes Inc N-Channel MOSFET, 6.4 A, 20 V, 3-Pin SOT-23 DMN2041L-7
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Pack
50 - 550₪ 2.265₪ 113.25
600 - 1450₪ 1.035₪ 51.75
1500+₪ 0.825₪ 41.25

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

6.4 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

41 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

780 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Typical Gate Charge @ Vgs

15.6 nC @ 10 V

Width

1.4mm

Transistor Material

Si

Length

3mm

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Height

1.1mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

N-Channel MOSFET, 12V to 28V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more