Technical documents
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
100 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
99 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
34 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.2mm
Typical Gate Charge @ Vgs
25.2 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
2.39mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.77V
Product details
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
₪ 304.50
₪ 3.045 Each (Supplied on a Reel) (ex VAT)
₪ 356.26
₪ 3.563 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
100
₪ 304.50
₪ 3.045 Each (Supplied on a Reel) (ex VAT)
₪ 356.26
₪ 3.563 Each (Supplied on a Reel) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
100
Stock information temporarily unavailable.
| quantity | Unit price | Per Reel | 
|---|---|---|
| 100 - 480 | ₪ 3.045 | ₪ 60.90 | 
| 500 - 980 | ₪ 2.775 | ₪ 55.50 | 
| 1000 - 2480 | ₪ 2.535 | ₪ 50.70 | 
| 2500+ | ₪ 2.28 | ₪ 45.60 | 
Technical documents
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
100 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
99 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
34 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.2mm
Typical Gate Charge @ Vgs
25.2 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
2.39mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.77V
Product details


