Technical documents
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
12 V
Package Type
SOT-346
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
41 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.8V
Minimum Gate Threshold Voltage
0.35V
Maximum Power Dissipation
1.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
1.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.1mm
Typical Gate Charge @ Vgs
50.6 nC @ 8 V
Maximum Operating Temperature
+150 °C
Height
1.3mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Product details
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
₪ 141.75
₪ 2.835 Each (In a Pack of 50) (ex VAT)
₪ 165.85
₪ 3.317 Each (In a Pack of 50) (inc. VAT)
Standard
50
₪ 141.75
₪ 2.835 Each (In a Pack of 50) (ex VAT)
₪ 165.85
₪ 3.317 Each (In a Pack of 50) (inc. VAT)
Stock information temporarily unavailable.
Standard
50
Stock information temporarily unavailable.
| quantity | Unit price | Per Pack |
|---|---|---|
| 50 - 200 | ₪ 2.835 | ₪ 141.75 |
| 250 - 950 | ₪ 1.62 | ₪ 81.00 |
| 1000 - 1950 | ₪ 1.185 | ₪ 59.25 |
| 2000 - 2950 | ₪ 1.125 | ₪ 56.25 |
| 3000+ | ₪ 1.095 | ₪ 54.75 |
Technical documents
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
12 V
Package Type
SOT-346
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
41 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.8V
Minimum Gate Threshold Voltage
0.35V
Maximum Power Dissipation
1.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
1.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.1mm
Typical Gate Charge @ Vgs
50.6 nC @ 8 V
Maximum Operating Temperature
+150 °C
Height
1.3mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Product details


