Diodes Inc Dual N-Channel MOSFET, 7.5 A, 30 V, 8-Pin SOIC DMG4800LSD-13

RS Stock No.: 751-4109PBrand: DiodesZetexManufacturers Part No.: DMG4800LSD-13
brand-logo
View all in MOSFETs

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

7.5 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

22 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.6V

Maximum Power Dissipation

1.5 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-25 V, +25 V

Typical Gate Charge @ Vgs

8.56 nC @ 5 V

Width

3.95mm

Transistor Material

Si

Number of Elements per Chip

2

Length

4.95mm

Maximum Operating Temperature

+150 °C

Height

1.5mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

Dual N-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

₪ 283.12

₪ 2.265 Each (Supplied on a Reel) (ex VAT)

₪ 331.25

₪ 2.65 Each (Supplied on a Reel) (inc. VAT)

Diodes Inc Dual N-Channel MOSFET, 7.5 A, 30 V, 8-Pin SOIC DMG4800LSD-13
Select packaging type

₪ 283.12

₪ 2.265 Each (Supplied on a Reel) (ex VAT)

₪ 331.25

₪ 2.65 Each (Supplied on a Reel) (inc. VAT)

Diodes Inc Dual N-Channel MOSFET, 7.5 A, 30 V, 8-Pin SOIC DMG4800LSD-13

Stock information temporarily unavailable.

Select packaging type

Stock information temporarily unavailable.

quantityUnit pricePer Reel
125 - 600₪ 2.265₪ 56.62
625 - 1225₪ 2.025₪ 50.62
1250+₪ 1.80₪ 45.00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

7.5 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

22 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.6V

Maximum Power Dissipation

1.5 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-25 V, +25 V

Typical Gate Charge @ Vgs

8.56 nC @ 5 V

Width

3.95mm

Transistor Material

Si

Number of Elements per Chip

2

Length

4.95mm

Maximum Operating Temperature

+150 °C

Height

1.5mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

Dual N-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more