Disruption To Air Freight Service

Due to the ongoing situation in the region air freight services are being restricted and thus delivery times are being affected. For further information please contact sales@rsisrael.co.il

Diodes Inc Dual N/P-Channel MOSFET, 9.3 A, 9.6 A, 35 V, 3-Pin DPAK DMG4511SK4-13

RS Stock No.: 165-8875Brand: DiodesZetexManufacturers Part No.: DMG4511SK4-13
brand-logo
View all in MOSFETs

Technical documents

Specifications

Channel Type

N, P

Maximum Continuous Drain Current

9.3 A, 9.6 A

Maximum Drain Source Voltage

35 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Maximum Power Dissipation

8.9 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Length

6.7mm

Typical Gate Charge @ Vgs

18.7 nC @ 10 V, 19.2 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

2

Width

6.2mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

2.39mm

Country of Origin

China

Product details

Dual N/P-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Stock information temporarily unavailable.

₪ 8,362.50

₪ 3.345 Each (On a Reel of 2500) (ex VAT)

₪ 9,784.12

₪ 3.914 Each (On a Reel of 2500) (inc. VAT)

Diodes Inc Dual N/P-Channel MOSFET, 9.3 A, 9.6 A, 35 V, 3-Pin DPAK DMG4511SK4-13

₪ 8,362.50

₪ 3.345 Each (On a Reel of 2500) (ex VAT)

₪ 9,784.12

₪ 3.914 Each (On a Reel of 2500) (inc. VAT)

Diodes Inc Dual N/P-Channel MOSFET, 9.3 A, 9.6 A, 35 V, 3-Pin DPAK DMG4511SK4-13
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Channel Type

N, P

Maximum Continuous Drain Current

9.3 A, 9.6 A

Maximum Drain Source Voltage

35 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Maximum Power Dissipation

8.9 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Length

6.7mm

Typical Gate Charge @ Vgs

18.7 nC @ 10 V, 19.2 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

2

Width

6.2mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

2.39mm

Country of Origin

China

Product details

Dual N/P-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more