Diodes Inc N-Channel MOSFET, 10 A, 30 V, 8-Pin SOIC DMG4466SSS-13

RS Stock No.: 751-4105Brand: DiodesZetexManufacturers Part No.: DMG4466SSS-13
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

33 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Maximum Power Dissipation

1.42 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Transistor Material

Si

Number of Elements per Chip

1

Length

4.95mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

10.5 nC @ 10 V

Width

3.95mm

Height

1.5mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

N-Channel MOSFET, 30V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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₪ 68.25

₪ 2.73 Each (In a Pack of 25) (ex VAT)

₪ 79.85

₪ 3.194 Each (In a Pack of 25) (inc. VAT)

Diodes Inc N-Channel MOSFET, 10 A, 30 V, 8-Pin SOIC DMG4466SSS-13
Select packaging type

₪ 68.25

₪ 2.73 Each (In a Pack of 25) (ex VAT)

₪ 79.85

₪ 3.194 Each (In a Pack of 25) (inc. VAT)

Diodes Inc N-Channel MOSFET, 10 A, 30 V, 8-Pin SOIC DMG4466SSS-13

Stock information temporarily unavailable.

Select packaging type

Stock information temporarily unavailable.

quantityUnit pricePer Pack
25 - 100₪ 2.73₪ 68.25
125+₪ 1.50₪ 37.50

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

33 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Maximum Power Dissipation

1.42 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Transistor Material

Si

Number of Elements per Chip

1

Length

4.95mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

10.5 nC @ 10 V

Width

3.95mm

Height

1.5mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

N-Channel MOSFET, 30V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more