Technical documents
Specifications
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
71 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
900 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Typical Gate Charge @ Vgs
9.1 nC @ 4.5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3mm
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.1mm
Country of Origin
China
Product details
P-Channel MOSFET, 12V to 25V, Diodes Inc
MOSFET Transistors, Diodes Inc.
₪ 294.75
₪ 1.965 Each (Supplied on a Reel) (ex VAT)
₪ 344.86
₪ 2.299 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
150
₪ 294.75
₪ 1.965 Each (Supplied on a Reel) (ex VAT)
₪ 344.86
₪ 2.299 Each (Supplied on a Reel) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
150
Stock information temporarily unavailable.
| quantity | Unit price | Per Reel |
|---|---|---|
| 150 - 725 | ₪ 1.965 | ₪ 49.12 |
| 750 - 1475 | ₪ 1.89 | ₪ 47.25 |
| 1500+ | ₪ 1.545 | ₪ 38.62 |
Technical documents
Specifications
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
71 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
900 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Typical Gate Charge @ Vgs
9.1 nC @ 4.5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3mm
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.1mm
Country of Origin
China
Product details


