Technical documents
Specifications
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
134 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
1.9 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3mm
Typical Gate Charge @ Vgs
4 nC @ 10 V
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1mm
Product details
P-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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₪ 1.077
Each (In a Pack of 100) (ex VAT)
₪ 1.26
Each (In a Pack of 100) (inc VAT)
100
₪ 1.077
Each (In a Pack of 100) (ex VAT)
₪ 1.26
Each (In a Pack of 100) (inc VAT)
100
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
100 - 500 | ₪ 1.077 | ₪ 107.68 |
600 - 1400 | ₪ 0.909 | ₪ 90.90 |
1500+ | ₪ 0.741 | ₪ 74.12 |
Technical documents
Specifications
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
134 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
1.9 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3mm
Typical Gate Charge @ Vgs
4 nC @ 10 V
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1mm
Product details