Technical documents
Specifications
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
3.3 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
200 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
1.4 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+8 V
Number of Elements per Chip
1
Width
1.4mm
Length
3mm
Typical Gate Charge @ Vgs
10.2 nC @ 4.5 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1.1mm
Country of Origin
China
Product details
P-Channel MOSFET, 12V to 25V, Diodes Inc
MOSFET Transistors, Diodes Inc.
₪ 4,500.00
₪ 0.45 Each (On a Reel of 10000) (ex VAT)
₪ 5,265.00
₪ 0.526 Each (On a Reel of 10000) (inc. VAT)
10000
₪ 4,500.00
₪ 0.45 Each (On a Reel of 10000) (ex VAT)
₪ 5,265.00
₪ 0.526 Each (On a Reel of 10000) (inc. VAT)
10000
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Reel |
---|---|---|
10000 - 20000 | ₪ 0.45 | ₪ 4,500.00 |
30000+ | ₪ 0.345 | ₪ 3,450.00 |
Technical documents
Specifications
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
3.3 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
200 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
1.4 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+8 V
Number of Elements per Chip
1
Width
1.4mm
Length
3mm
Typical Gate Charge @ Vgs
10.2 nC @ 4.5 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1.1mm
Country of Origin
China
Product details