Technical documents
Specifications
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
640 mA, 870 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-563
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
1.3 Ω, 700 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
530 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-6 V, +6 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
1.7mm
Width
1.25mm
Transistor Material
Si
Typical Gate Charge @ Vgs
0.62 nC @ 4.5 V, 0.74 nC @ 4.5 V
Minimum Operating Temperature
-55 °C
Height
0.6mm
Country of Origin
China
Product details
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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₪ 2.545
Each (Supplied as a Tape) (ex VAT)
₪ 2.978
Each (Supplied as a Tape) (inc VAT)
50
₪ 2.545
Each (Supplied as a Tape) (ex VAT)
₪ 2.978
Each (Supplied as a Tape) (inc VAT)
50
Buy in bulk
quantity | Unit price | Per Tape |
---|---|---|
50 - 550 | ₪ 2.545 | ₪ 127.25 |
600 - 1450 | ₪ 1.189 | ₪ 59.43 |
1500+ | ₪ 0.881 | ₪ 44.05 |
Technical documents
Specifications
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
640 mA, 870 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-563
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
1.3 Ω, 700 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
530 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-6 V, +6 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
1.7mm
Width
1.25mm
Transistor Material
Si
Typical Gate Charge @ Vgs
0.62 nC @ 4.5 V, 0.74 nC @ 4.5 V
Minimum Operating Temperature
-55 °C
Height
0.6mm
Country of Origin
China
Product details