Diodes Inc Dual N-Channel MOSFET, 115 mA, 60 V, 6-Pin SOT-363 2N7002DW-7-F
Technical documents
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
115 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
13.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
200 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
2
Length
2.2mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1mm
Product details
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
₪ 48.38
₪ 1.935 Each (In a Pack of 25) (ex VAT)
₪ 56.60
₪ 2.264 Each (In a Pack of 25) (inc. VAT)
Standard
25
₪ 48.38
₪ 1.935 Each (In a Pack of 25) (ex VAT)
₪ 56.60
₪ 2.264 Each (In a Pack of 25) (inc. VAT)
Stock information temporarily unavailable.
Standard
25
Stock information temporarily unavailable.
| quantity | Unit price | Per Pack |
|---|---|---|
| 25 - 225 | ₪ 1.935 | ₪ 48.38 |
| 250 - 725 | ₪ 0.81 | ₪ 20.25 |
| 750 - 1475 | ₪ 0.795 | ₪ 19.88 |
| 1500+ | ₪ 0.72 | ₪ 18.00 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical documents
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
115 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
13.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
200 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
2
Length
2.2mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1mm
Product details
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products