Technical documents
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
200 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
44 nC @ 10 V
Width
9.65mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+150 °C
Height
4.83mm
Minimum Operating Temperature
-55 °C
Product details
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
₪ 146.85
₪ 14.685 Each (Supplied in a Tube) (ex VAT)
₪ 171.81
₪ 17.181 Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
10
₪ 146.85
₪ 14.685 Each (Supplied in a Tube) (ex VAT)
₪ 171.81
₪ 17.181 Each (Supplied in a Tube) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Tube)
10
Stock information temporarily unavailable.
quantity | Unit price | Per Tube |
---|---|---|
10 - 15 | ₪ 14.685 | ₪ 73.42 |
20 - 45 | ₪ 14.175 | ₪ 70.88 |
50 - 95 | ₪ 13.65 | ₪ 68.25 |
100+ | ₪ 13.155 | ₪ 65.78 |
Technical documents
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
200 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
44 nC @ 10 V
Width
9.65mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+150 °C
Height
4.83mm
Minimum Operating Temperature
-55 °C
Product details