Technical documents
Specifications
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
2.8 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
900 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Typical Gate Charge @ Vgs
3.69 nC @ 4.5 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.05mm
Maximum Operating Temperature
+150 °C
Height
0.95mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel Power MOSFET, Taiwan Semiconductor
MOSFET Transistors, Taiwan Semiconductor
₪ 270.00
₪ 1.08 Each (Supplied on a Reel) (ex VAT)
₪ 315.90
₪ 1.264 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
250
₪ 270.00
₪ 1.08 Each (Supplied on a Reel) (ex VAT)
₪ 315.90
₪ 1.264 Each (Supplied on a Reel) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
250
Stock information temporarily unavailable.
quantity | Unit price | Per Reel |
---|---|---|
250 - 450 | ₪ 1.08 | ₪ 54.00 |
500 - 950 | ₪ 1.035 | ₪ 51.75 |
1000 - 2450 | ₪ 0.975 | ₪ 48.75 |
2500+ | ₪ 0.885 | ₪ 44.25 |
Technical documents
Specifications
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
2.8 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
900 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Typical Gate Charge @ Vgs
3.69 nC @ 4.5 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.05mm
Maximum Operating Temperature
+150 °C
Height
0.95mm
Minimum Operating Temperature
-55 °C
Product details