Technical documents
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
380 mA
Maximum Drain Source Voltage
30 V
Package Type
SOT-523 (SC-89)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3.2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
520 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
0.85mm
Transistor Material
Si
Number of Elements per Chip
1
Length
1.7mm
Typical Gate Charge @ Vgs
0.5 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
0.8mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
₪ 157.50
₪ 0.315 Each (Supplied on a Reel) (ex VAT)
₪ 184.28
₪ 0.369 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
500
₪ 157.50
₪ 0.315 Each (Supplied on a Reel) (ex VAT)
₪ 184.28
₪ 0.369 Each (Supplied on a Reel) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
500
Stock information temporarily unavailable.
| quantity | Unit price | Per Reel |
|---|---|---|
| 500 - 900 | ₪ 0.315 | ₪ 31.50 |
| 1000 - 2400 | ₪ 0.27 | ₪ 27.00 |
| 2500+ | ₪ 0.255 | ₪ 25.50 |
Technical documents
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
380 mA
Maximum Drain Source Voltage
30 V
Package Type
SOT-523 (SC-89)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3.2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
520 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
0.85mm
Transistor Material
Si
Number of Elements per Chip
1
Length
1.7mm
Typical Gate Charge @ Vgs
0.5 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
0.8mm
Minimum Operating Temperature
-55 °C
Product details


