Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
40 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
22 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
15.6 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Length
5.99mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5mm
Transistor Material
Si
Number of Elements per Chip
2
Height
1.07mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
Dual N-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
₪ 286.20
₪ 9.54 Each (Supplied on a Reel) (ex VAT)
₪ 334.85
₪ 11.162 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
30
₪ 286.20
₪ 9.54 Each (Supplied on a Reel) (ex VAT)
₪ 334.85
₪ 11.162 Each (Supplied on a Reel) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
30
Stock information temporarily unavailable.
quantity | Unit price | Per Reel |
---|---|---|
30 - 140 | ₪ 9.54 | ₪ 95.40 |
150 - 740 | ₪ 8.415 | ₪ 84.15 |
750 - 1490 | ₪ 7.185 | ₪ 71.85 |
1500+ | ₪ 6.525 | ₪ 65.25 |
Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
40 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
22 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
15.6 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Length
5.99mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5mm
Transistor Material
Si
Number of Elements per Chip
2
Height
1.07mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details