Technical documents
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
6.5 A
Maximum Drain Source Voltage
40 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
34 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
4mm
Number of Elements per Chip
2
Length
5mm
Transistor Material
Si
Typical Gate Charge @ Vgs
41.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.55mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
Dual P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
₪ 751.50
₪ 7.515 Each (Supplied on a Reel) (ex VAT)
₪ 879.26
₪ 8.793 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
100
₪ 751.50
₪ 7.515 Each (Supplied on a Reel) (ex VAT)
₪ 879.26
₪ 8.793 Each (Supplied on a Reel) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
100
Stock information temporarily unavailable.
quantity | Unit price | Per Reel |
---|---|---|
100 - 480 | ₪ 7.515 | ₪ 150.30 |
500 - 1480 | ₪ 6.00 | ₪ 120.00 |
1500 - 2480 | ₪ 4.815 | ₪ 96.30 |
2500+ | ₪ 4.53 | ₪ 90.60 |
Technical documents
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
6.5 A
Maximum Drain Source Voltage
40 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
34 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
4mm
Number of Elements per Chip
2
Length
5mm
Transistor Material
Si
Typical Gate Charge @ Vgs
41.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.55mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details